050-7112 rev a 12-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com g d s lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular to-264 max package to-264 max apt10026l2fll 1000v 38a 0.260 ? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 19a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1000 0.260 100500 100 35 apt10026l2fll 1000 38 152 3040 893 7.14 -55 to 150 300 3850 3200 power mos 7 r fredfet downloaded from: http:///
dynamic characteristics 050-7112 rev a 12-2003 apt10026l2fll note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -38a) peak diode recovery dv / dt 5 reverse recovery time(i s = -38a, di / dt = 100a/s) reverse recovery charge(i s = -38a, di / dt = 100a/s) peak recovery current(i s = -38a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 38 152 1.3 18 t j = 25c 310 t j = 125c 625 t j = 25c 2.0 t j = 125c 6.0 t j = 25c 15 t j = 125c 2.6 symbol r jc r ja min typ max 0.14 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 4.43mh, r g = 25 , peak i l = 38a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 30a di / dt 700a/s v r 1000 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 38a @ 25c resistive switching v gs = 15v v dd = 500v i d = 38a @ 25c r g = 0.6 inductive switching @ 25c v dd = 667v, v gs = 15v i d = 38a, r g = 3 inductive switching @ 125c v dd = 667v v gs = 15v i d = 38a, r g = 3 min typ max 71141268 224267 34 173 17 8 39 9 1196 713 2014 971 unit pf nc ns j downloaded from: http:///
050-7112 rev a 12-2003 apt10026l2fll typical performance curves v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c 7.5v 5v 5.5v 6.5v 6v 7v 15 &10v v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ i d = 19a 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 19a v gs = 10v 9080 70 60 50 40 30 20 10 0 1.41.3 1.2 1.1 1.0 0.9 0.8 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 120100 8060 40 20 0 4035 30 25 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 0.05090.0894 0.0522f0.988f power (watts) rc model junctiontemp. ( c) case temperature. ( c) downloaded from: http:///
050-7112 rev a 12-2003 apt10026l2fll e on e off v dd = 667v r g = 3 t j = 125c l = 100h e on includes diode reverse recovery. v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) c rss c iss c oss t j =+150c t j =+25c 1 10 100 1000 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 10ms 1ms 100s t c = +25c t j = +150c single pulse operation here limited by r ds (on) i d = 38a 152 5010 1 1612 84 0 30,00010,000 1,000 100200 100 10 1 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 667v r g = 3 t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 5 10 15 20 25 30 35 40 45 50 55 60 5 10 15 20 25 30 35 40 45 50 55 60 5101520 2530354045505560 0 5 10 15 20 25 30 3540 45 50 v dd = 667v i d = 38a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) 160140 120 100 8060 40 20 0 40003500 3000 2500 2000 1500 1000 500 0 v dd = 667v r g = 3 t j = 125c l = 100h 100 8060 40 20 0 10000 80006000 4000 2000 0 v ds = 500v v ds = 200v v ds = 800v downloaded from: http:///
050-7112 rev a 12-2003 apt10026l2fll typical performance curves to-264 max tm (l2) package outline 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt30df120 v ce figure 20, inductive switching test circuit g v dd 10% 90% 10% t r 5% t d(on) switching energy 5% 90% 90% 10% t f 0 t d(off) t j = 125c switching energy downloaded from: http:///
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